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文章速递Laser Interference Lithography for Fabrication of Planar Scale Gratings for Optical Metrology 认领
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作者 Yuki Shimizu 《纳米制造与计量(英文)》 2021年第1期3-27,共25页
Laser interference lithography is an attractive method for the fabrication of a large-area two-dimensional planar scale grating,which can be employed as a scale for multi-axis optical encoders or a diffractive optical... Laser interference lithography is an attractive method for the fabrication of a large-area two-dimensional planar scale grating,which can be employed as a scale for multi-axis optical encoders or a diffractive optical element in many types of optical sensors.Especially,optical configurations such as Lloyd's mirror interferometer based on the division of wavefront method can generate interference fringe fields for the patterning of grating pattern structures at a single exposure in a stable manner.For the fabrication of a two-dimensional scale grating to be used in a planar/surface encoder,an orthogonal two-axis Lloyd's mirror interferometer,which has been realized through innovation to Lloyd’s mirror interferometer,has been developed.In addition,the concept of the patterning of the two-dimensional orthogonal pattern structure at a single exposure has been extended to the non-orthogonal two-axis Lloyd’s mirror interferometer.Furthermore,the optical setup for the non-orthogonal two-axis Lloyd's mirror interferometer has been optimized for the fabrication of a large-area scale grating.In this review article,principles of generating interference fringe fields for the fabrication of a scale grating based on the interference lithography are reviewed,while focusing on the fabrication of a two-dimensional scale grating for planar/surface encoders.Verification of the pitch of the fabricated pattern structures,whose accuracy strongly affects the performance of planar/surface encoders,is also an important task to be addressed.In this paper,major methods for the evaluation of a grating pitch are also reviewed. 展开更多
关键词 Planar scale grating Interference lithography Lloyd’s mirror interferometer Interference fringe
微尺度MEMS上层芯片表面应变测量的方法研究 认领
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作者 罗钧文 戴强 陈翔 《机械设计与制造》 北大核心 2021年第2期196-198,203,共4页
随着微纳加工技术的发展,微机电系统器件的运用领域愈加广泛,其中微机械结构的变形失效机理研究显得尤为重要。针对MEMS上层硅芯片在微尺度情况下的表面应变测量,提出了一种结合光学显微视觉、硅芯片表面特征图案的光刻工艺技术和数字... 随着微纳加工技术的发展,微机电系统器件的运用领域愈加广泛,其中微机械结构的变形失效机理研究显得尤为重要。针对MEMS上层硅芯片在微尺度情况下的表面应变测量,提出了一种结合光学显微视觉、硅芯片表面特征图案的光刻工艺技术和数字图像处理技术的方法。经由该方法提取出表面图案的边缘特征,进而获得硅芯片表面的微小应变情况。通过测量硅芯片的热膨胀系数,测量值与理论值的平均相对误差值在10%以内。表明该方法可成功应用于MEMS上层硅芯片表面应变的测量。 展开更多
关键词 芯片表面 应变测量 微尺度 显微视觉 光刻
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Large-area flexible nanostripe electrodes featuring plasmon hybridization engineering 认领
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作者 Carlo Mennucci Debasree Chowdhury +4 位作者 Giacomo Manzato Matteo Barelli Roberto Chittofrati Christian Martella Francesco Buatier de Mongeot 《纳米研究:英文版》 SCIE EI CAS 2021年第3期858-867,共10页
Multifunctional flexible Au electrodes based on one-dimensional(1D)arrays of plasmonic gratings are nanofabricated over large areas with an engineered variant of laser interference lithography optimized for low-cost t... Multifunctional flexible Au electrodes based on one-dimensional(1D)arrays of plasmonic gratings are nanofabricated over large areas with an engineered variant of laser interference lithography optimized for low-cost transparent templates.Au nanostripe(NS)arrays achieve sheet resistance in the order of 20 Ohm/square on large areas(∼cm^(2))and are characterized by a strong and dichroic plasmonic response which can be easily tuned across the visible(VIS)to near-infrared(NIR)spectral range by tailoring their cross-sectional morphology.Stacking vertically a second nanostripe,separated by a nanometer scale dielectric gap,we form near-field coupled Au/SiO_(2)/Au dimers which feature hybridization of their localized plasmon resonances,strong local field-enhancements and a redshift of the resonance towards the NIR range.The possibility to combine excellent transport properties and optical transparency on the same plasmonic metasurface template is appealing in applications where low-energy photon management is mandatory like e.g.,in plasmon enhanced spectroscopies or in photon harvesting for ultrathin photovoltaic devices.The remarkable lateral order of the plasmonic NS gratings provides an additional degree of freedom for tailoring the optical response of the multifunctional electrodes via the excitation of surface lattice resonances,a Fano-like coupling between the broad localised plasmonic resonances and the collective sharp Rayleigh modes. 展开更多
关键词 nanofabrication nanostripes transparent electrodes plasmonic dimers interference lithography surface lattice resonances
作为区分的印刷术与近代中国报业的读者想象(1815-1911) 认领
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作者 杜恺健 王润泽 《编辑之友》 北大核心 2021年第3期99-105,共7页
印刷术本身是一个技术问题,但在适应和选择上,利用印刷术往往超出了单纯的技术层面,还牵涉其他诸如经济、政治、文化、宗教等社会因素。中国近代报业的发展史同样如此,报纸对读者的想象汇集了以上的诸多思考。通过对木刻、西式活字、石... 印刷术本身是一个技术问题,但在适应和选择上,利用印刷术往往超出了单纯的技术层面,还牵涉其他诸如经济、政治、文化、宗教等社会因素。中国近代报业的发展史同样如此,报纸对读者的想象汇集了以上的诸多思考。通过对木刻、西式活字、石印三种印刷技术的考察,本研究发现技术所带来的最大作用,不在于制造区分,而在于弥合区分。技术需迎合社会的需求,但这种需求是多方面的,并非技术进步就包揽一切。木刻、活字印刷、石印三种技术,虽然各自的技术特性有所不同,但当它们被用在印制报纸上时,它们的想象则是一致的,其最终所指向的都是生活在中国大地上的平民大众。 展开更多
关键词 区分 印刷术 木刻 西式活字 石印
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3D printed fiber sockets for plug and play micro-optics 认领
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作者 Parvathi S Nair Jonathan Trisno +1 位作者 Hongtao Wang Joel K W Yang 《极端制造(英文)》 EI 2021年第1期122-129,共8页
Integrating micro-optical components at the end facet of an optical fiber enables compact optics to shape the output beam(e.g.collimating,focusing,and coupling to free space elements or photonic integrated circuits).H... Integrating micro-optical components at the end facet of an optical fiber enables compact optics to shape the output beam(e.g.collimating,focusing,and coupling to free space elements or photonic integrated circuits).However,the scalability of this approach is a longstanding challenge as these components must be aligned onto individual fiber facets.In this paper,we propose a socket that enables easy slotting of fibers,self-alignment,and coupling onto micro-optical components.This integrated socket can be detached from the substrate upon fiber insertion to create a stand-alone optical system.Fabrication is done using nanoscale 3D printing via two-photon polymerization lithography onto glass substrates,which allows multiple sockets to be patterned in a single print.We investigated variations in socket design and evaluated the performance of optical elements for telecom wavelengths.We obtained an alignment accuracy of∼3.5μm.These socket designs can be customized for high efficiency chip to fiber coupling and extended to other spectral ranges for free-form optics. 展开更多
关键词 integrated socket ALIGNMENT fiber slotting fiber connector two-photon polymerization lithography
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光刻调焦调平测量系统算法比较研究 认领
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作者 范伟 李世光 +2 位作者 武志鹏 段晨 宗明成 《计算机与数字工程》 2021年第3期427-432,438,共7页
调焦调平测量系统是光刻机对焦控制的核心部件,调焦调平测量系统的数据处理精度影响光刻机的对焦控制性能,计算速度影响光刻机产能。论文通过仿真与实验对比分析了多项式拟合算法(polynomial fitting)、RF(random forest)算法和XGBoost(... 调焦调平测量系统是光刻机对焦控制的核心部件,调焦调平测量系统的数据处理精度影响光刻机的对焦控制性能,计算速度影响光刻机产能。论文通过仿真与实验对比分析了多项式拟合算法(polynomial fitting)、RF(random forest)算法和XGBoost(extreme gradient boosting)算法在调焦调平测量系统中的测量精度与计算耗时。仿真与实验结果表明,多项式拟合算法精度随时间变化不敏感,RF算法和XGBoost算法精度随计算时间的增加而迅速提升。对于不存在噪声的仿真数据,7阶多项式拟合的3σ值为0.001nm;RF算法在2ms时可对仿真数据完全拟合;XFBoost算法在5ms时,拟合精度基本趋于稳定,为0.6nm。对于存在噪声的实验数据,RF算法与XGBoost算法对噪声有较好的鲁棒性,随计算时间的增加,RF算法与XGBoost算法拟合精度不断提升并分别于3ms和5ms超越多项式拟合算法,但精度提升有限。在光刻机中,为了兼顾对焦精度和产能,必须兼顾算法的拟合精度与拟合时间,因此调焦调平测量系统选用多项式拟合算法较为合适。 展开更多
关键词 光刻 调焦调平 精度 拟合算法
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Study of Inverse Lithography Approaches based on Deep Learning 认领
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作者 Xianqiang Zheng Xu Ma +2 位作者 Shengen Zhang Yihua Pan Gonzalo RArce 《微电子制造学报》 2020年第3期1-7,共7页
Computational lithography(CL)has become an indispensable technology to improve imaging resolution and fidelity of deep sub-wavelength lithography.The state-of-the-art CL approaches are capable of optimizing pixel-base... Computational lithography(CL)has become an indispensable technology to improve imaging resolution and fidelity of deep sub-wavelength lithography.The state-of-the-art CL approaches are capable of optimizing pixel-based mask patterns to effectively improve the degrees of optimization freedom.However,as the growth of data volume of photomask layouts,computational complexity has become a challenging problem that prohibits the applications of advanced CL algorithms.In the past,a number of innovative methods have been developed to improve the computational efficiency of CL algorithms,such as machine learning and deep learning methods.Based on the brief introduction of optical lithography,this paper reviews some recent advances of fast CL approaches based on deep learning.At the end,this paper briefly discusses some potential developments in future work. 展开更多
关键词 Computational lithography inverse lithography technology(ILT) optical proximity correction(OPC) deep learning
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Scanning probe lithography on calixarene towards single-digit nanometer fabrication 认领
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作者 Marcus Kaestner Ivo W Rangelow 《极端制造(英文)》 2020年第3期104-124,共21页
Cost effective patterning based on scanning probe nanolithography(SPL)has the potential for electronic and optical nano-device manufacturing and other nanotechnological applications.One of the fundamental advantages o... Cost effective patterning based on scanning probe nanolithography(SPL)has the potential for electronic and optical nano-device manufacturing and other nanotechnological applications.One of the fundamental advantages of SPL is its capability for patterning and imaging employing the same probe.This is achieved with self-sensing and self-actuating cantilevers,also known as‘active'cantilevers.Here we used active cantilevers to demonstrate a novel path towards single digit nanoscale patterning by employing a low energy(<100 eV)electron exposure to thin films of molecular resist.By tuning the electron energies to the lithographically relevant chemical resist transformations,the interaction volumes can be highly localized.This method allows for greater control over spatially confined lithography and enhances sensitivity.We found that at low electron energies,the exposure in ambient conditions required approximately 10 electrons per single calixarene molecule to induce a crosslinking event.The sensitivity was 80-times greater than a classical electron beam exposure at 30 keV.By operating the electro-exposure process in ambient conditions a novel lithographic reaction scheme based on a direct ablation of resist material(positive tone)is presented. 展开更多
关键词 nanofabrication field-emission scanning probe lithography single nanometer lithography molecular resist
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A Study of 2D Assist Feature Placement 认领
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作者 Liang Zhu Barry Ma +1 位作者 Lin Shen Kevin Beaudette 《微电子制造学报》 2020年第1期23-26,共4页
Sub-resolution assist features have been widely recognized in lithography patterning. Ingeneral, the insertion of assist features in optically adjacent space around main designed features,will change the aerial image ... Sub-resolution assist features have been widely recognized in lithography patterning. Ingeneral, the insertion of assist features in optically adjacent space around main designed features,will change the aerial image intensity profiles of corresponding main features. Optimizing assistfeature placement lets the main feature obtain optimal or better image contrast, better imagingresolution and depth of focus (DOF). Recent EUV lithography development, however, imposesstrict budget of edge placement error and process window control causing assist features tobecome more and more complex. In this domain, 1D assisting feature can no longer meet suchtight requirements, and 2D assisting features have become necessary in the semiconductor industry.In this paper, the process window and edge placement error evaluations of different 2D assistfeature types are reviewed, along with their associated run time and memory consumption. Varioustypes of 2D assist features are evaluated, including 45-degree disconnected assist features, 45-degree connected assisting features, Manhattan only assist feature arrays, and so on. To generatethe assist features, the model-based assisting feature rule table is first generated using the opticalmodel as the reference. The rule table is then split into different rule sets by considering thedimensions and types of assisting features. Finally, the CD variations across process window areevaluated as the success criteria of each assist feature rule sets. In addition, an inverse lithographytechnology (ILT) based approach is proposed to generate the optimized rule table, as ILT is wellknown to have considerable benefits in finding the best pattern solutions to improve processwindow, 2D CD control, and resolution in the low K1 lithography regime. At the end of this paper,the summary discusses how the assisting feature placement can be further optimized using leadingedgetechnologies like machine learning. 展开更多
关键词 Assist FEATURE INVERSE LITHOGRAPHY Technology Low K1 LITHOGRAPHY MACHINE Learning
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“S”型二元编码的正弦结构光模板设汁与实验研究 认领
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作者 周佩 朱江平 +3 位作者 脑龙 段智涓 安世勇 郭燕琼 《激光与光电子学进展》 CSCD 北大核心 2020年第15期100-108,共9页
正弦结构光场普遍应用于精密光学的三维测M,其正弦性直接或间接影响维测量的精度。根据正弦条纹的周期性和对称性等几何特征,以计算机产生的标准正弦条纹单个周期作为编码对象,提出一种“S”型路径误差扩散的二元编码方法。整个正弦结... 正弦结构光场普遍应用于精密光学的三维测M,其正弦性直接或间接影响维测量的精度。根据正弦条纹的周期性和对称性等几何特征,以计算机产生的标准正弦条纹单个周期作为编码对象,提出一种“S”型路径误差扩散的二元编码方法。整个正弦结构光模板通过周期性复制编码单元来实现,再通过高分辨率光刻技术加工制作在镀铬玻璃基板表面上。模板调制照明光源后,表征二元编码特征的高频信息直接被投影光学系统滤波,而表征正弦条纹信息的低频信息得以保留,从而实现正弦结构光场。最后建立光学系统的光学传递特性模型,对其固有的低通滤波机制进行解释。通过计算机模拟和实验进行验证,结果表明提出的正弦结构光场编码方法和制作工艺具有可行性。 展开更多
关键词 测量 面形测量 二元编码 正弦结构光模板 光刻技术
光刻机物镜底部污染对策研究 认领
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作者 张洪博 《电子技术(上海)》 2020年第1期108-110,共3页
为满足光刻机物镜底部污染控制需求,在传统吹扫式气帘的基础上提出了填充式物镜气帘设计方案。该气帘利用正压的保护原理,将物镜底部与硅片面有机污染物进行隔离。借助计算流体力学软件提供的组分输运模型,对气帘进行了数值模拟。数值... 为满足光刻机物镜底部污染控制需求,在传统吹扫式气帘的基础上提出了填充式物镜气帘设计方案。该气帘利用正压的保护原理,将物镜底部与硅片面有机污染物进行隔离。借助计算流体力学软件提供的组分输运模型,对气帘进行了数值模拟。数值模拟结果表明,填充式物镜气帘的保护效果大幅提升,物镜底部污染物体积百分比降至0.2%以下。搭建了气帘污染实验平台,实验表明,填充式气帘可以有效保护物镜底部镜片不受有机污染物的污染。 展开更多
关键词 集成电路制造 光刻机 物镜污染 填充式气帘 数值模拟
步进扫描光刻机整机集成工艺方案设计 认领
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作者 陈慧 《中国集成电路》 2020年第7期74-78,共5页
步进扫描光刻机结构非常复杂,由十多个分系统组成。光刻机的装配分集成和调试两个阶段,指标均由整机尺寸链给出。指标的特点是:数量多、精度高。光整机集成阶段指标达100多个,部分集成精度达到微米级别,调试阶段的指标精度则更高。面对... 步进扫描光刻机结构非常复杂,由十多个分系统组成。光刻机的装配分集成和调试两个阶段,指标均由整机尺寸链给出。指标的特点是:数量多、精度高。光整机集成阶段指标达100多个,部分集成精度达到微米级别,调试阶段的指标精度则更高。面对如此复杂的系统,要想实现集成指标,必须系统性地进行集成工艺方案设计。 展开更多
关键词 光刻机 集成工艺方案设计 工装
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化学外延方式的嵌段共聚物定向自组装 认领
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作者 郭成 粟雅娟 +5 位作者 陈睿 董立松 张利斌 陈颖 盖天洋 韦亚一 《微纳电子技术》 北大核心 2020年第2期155-162,共8页
定向自组装(DSA)是一种新型的光刻分辨率增强技术,为了探究制约DSA应用于大规模集成电路制造的因素,采用仿真手段评估了DSA工艺条件以及不同版图设计对DSA的影响。基于Cahn-Hilliard方程,模拟了不同"吸附"强度及退火时间下的... 定向自组装(DSA)是一种新型的光刻分辨率增强技术,为了探究制约DSA应用于大规模集成电路制造的因素,采用仿真手段评估了DSA工艺条件以及不同版图设计对DSA的影响。基于Cahn-Hilliard方程,模拟了不同"吸附"强度及退火时间下的线条图形光刻轮廓,分析了上述工艺条件对光刻结果的影响,发现增加退火时间、增强衬底的"吸附"强度可以有效减小电路制造缺陷。基于7 nm设计规则,改变引导图形周期,得到线条图形线宽粗糙度(LWR)以及通孔图形的光刻轮廓图,分析了引导图形周期和LWR及轮廓图质量的关系,得出当引导图形周期为2倍共聚物自然周期(2L0)时,可以得到更好的光刻图形质量,并通过2L0周期扰动实验进一步验证了该结论。 展开更多
关键词 定向自组装(DSA) 化学外延 嵌段共聚物(BCP) 光刻 大规模集成电路
基于光刻胶三维形貌的光刻多参数联合优化方法 认领
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作者 茅言杰 李思坤 +2 位作者 王向朝 韦亚一 陈国栋 《光学学报》 EI CAS CSCD 北大核心 2020年第4期144-156,共13页
多参数联合优化是光刻分辨率增强技术的发展方向。提出了一种以光刻胶三维形貌差异为评价目标的光刻多参数联合优化方法。以多个深度位置的光刻胶图形误差为目标函数,对光源、掩模、投影物镜波前、离焦量和曝光剂量进行联合优化,提高了... 多参数联合优化是光刻分辨率增强技术的发展方向。提出了一种以光刻胶三维形貌差异为评价目标的光刻多参数联合优化方法。以多个深度位置的光刻胶图形误差为目标函数,对光源、掩模、投影物镜波前、离焦量和曝光剂量进行联合优化,提高了光刻胶图形三维形貌的质量。为获得较高的优化效率,采用自适应差分进化算法实现光源和掩模的优化,并针对其他参数的特点,采用不同优化方法进行优化。对密集线、含有交叉门的复杂掩模图形和静态随机存储器中的典型图形进行了仿真验证,可用焦深的最大值分别达到237nm、115nm和144.8nm,曝光宽容度的最大值分别达到18.5%、12.4%和16.4%。与基于空间像的光源掩模投影物镜联合优化技术相比,所提方法明显扩大了工艺窗口。 展开更多
关键词 光学制造 光刻 分辨率增强技术 光源掩模优化 光刻胶
Strengths, weaknesses, and applications of computational axial lithography in tissue engineering 认领
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作者 Bin Zhang Lei Gao +3 位作者 Qian Xue Zhanfeng Cui Liang Ma Huayong Yang 《生物设计与制造(英文)》 CSCD 2020年第1期5-6,共2页
Recently,Kelly and colleagues[1],inspired by computed tomography(CT),report a“volumetric additive manufacturing”technology via a computed axial lithography(CAL)approach.A related US patent application[2]has also bee... Recently,Kelly and colleagues[1],inspired by computed tomography(CT),report a“volumetric additive manufacturing”technology via a computed axial lithography(CAL)approach.A related US patent application[2]has also been filed.The cumulative light exposure solidifies the material in the target area,while the other area remains uncured,resulting in only specific points in the designed 3D objects being printed.This technology significantly improves the capability of the digital light processing(DLP)technique.Meanwhile,the lithography approach based on a similar algorithm was already proposed by Xiang Wu in a patent(application No.PCT/CN2016/080097)in 2016[3]. 展开更多
关键词 LITHOGRAPHY technique. AXIAL
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基于感光栅极GaN高迁移率晶体管的新型探测器制备与优化 认领
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作者 朱彦旭 杨壮 +4 位作者 宋会会 李赉龙 杨忠 李锜轩 胡铁凡 《光子学报》 EI CAS CSCD 北大核心 2020年第6期34-43,共10页
利用GaN高电子迁移率晶体管(HEMT)的栅控特性和锆钛酸铅(PZT)铁电薄膜的光伏效应,在HEMT器件的栅极处沉积一层PZT铁电薄膜,提出了一种新型的(光敏感层/HEMT)探测结构.为制备出光伏性能优异的薄膜,对不同的溅射功率和退火温度制备的PZT... 利用GaN高电子迁移率晶体管(HEMT)的栅控特性和锆钛酸铅(PZT)铁电薄膜的光伏效应,在HEMT器件的栅极处沉积一层PZT铁电薄膜,提出了一种新型的(光敏感层/HEMT)探测结构.为制备出光伏性能优异的薄膜,对不同的溅射功率和退火温度制备的PZT铁电薄膜进行表面形貌和铁电性能分析.发现200 W溅射功率、700℃的退火温度制备的薄膜表面晶粒生长明显,剩余极化强度为38.0μC·cm-2.工艺制备GaN基HEMT器件并把PZT薄膜沉积到器件栅极上.在无光和365nm紫外光照射下对有、无铁电薄膜的HEMT探测器的输出特性进行测试.结果显示,在光照时,有铁电薄膜的HEMT器件相较于无光时,源-漏饱和电压最多降低3.55V,饱和电流最多增加5.84mA,表明新型感光栅极HEMT探测器对紫外光具有优异的探测效果.为实现对新型探测器的结构进行优化的目的,对栅长为1μm、2μm和3μm等不同栅长的探测器进行光照测试.结果表明,在紫外光照射下,三种探测器的漏极饱和电流分别为23mA、20mA和17mA,所以栅长越长器件的饱和电流越小,探测性能越差. 展开更多
关键词 量子光学 光学探测器 光伏效应 铁电薄膜 氮化镓 紫外线源 光刻
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Small-world networks of neuroblastoma cells cultured in three-dimensional polymeric scaffolds featuring multi-scale roughness 认领 被引量:1
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作者 Valentina Onesto Angelo Accardo +1 位作者 Christophe Vieu Francesco Gentile 《中国神经再生研究:英文版》 SCIE CAS CSCD 2020年第4期759-768,共10页
Understanding the mechanisms underlying cell-surface interaction is of fundamental importance for the rational design of scaffolds aiming at tissue engineering,tissue repair and neural regeneration applications.Here,w... Understanding the mechanisms underlying cell-surface interaction is of fundamental importance for the rational design of scaffolds aiming at tissue engineering,tissue repair and neural regeneration applications.Here,we examined patterns of neuroblastoma cells cultured in three-dimensional polymeric scaffolds obtained by two-photon lithography.Because of the intrinsic resolution of the technique,the micrometric cylinders composing the scaffold have a lateral step size of~200 nm,a surface roughness of around 20 nm,and large values of fractal dimension approaching 2.7.We found that cells in the scaffold assemble into separate groups with many elements per group.After cell wiring,we found that resulting networks exhibit high clustering,small path lengths,and small-world characteristics.These values of the topological characteristics of the network can potentially enhance the quality,quantity and density of information transported in the network compared to equivalent random graphs of the same size.This is one of the first direct observations of cells developing into 3D small-world networks in an artificial matrix. 展开更多
关键词 3D NETWORKS BIOMATERIALS nano-topography network topology neuro-regeneration SMALL-WORLD NETWORKS tissue engineering TWO-PHOTON LITHOGRAPHY
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Directed self-assembly of block copolymers for sub-10 nm fabrication 认领
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作者 Yu Chen Shisheng Xiong 《极端制造(英文)》 2020年第3期126-159,共34页
Directed self-assembly(DSA)emerges as one of the most promising new patterning techniques for single digit miniaturization and next generation lithography.DSA achieves high-resolution patterning by molecular assembly ... Directed self-assembly(DSA)emerges as one of the most promising new patterning techniques for single digit miniaturization and next generation lithography.DSA achieves high-resolution patterning by molecular assembly that circumvents the diffraction limit of conventional photolithography.Recently,the International Roadmap for Devices and Systems listed DSA as one of the advanced lithography techniques for the fabrication of 3-5 nm technology node devices.DSA can be combined with other lithography techniques,such as extreme ultra violet(EUV)and 193 nm immersion(193i),to further enhance the patterning resolution and the device density.So far,DSA has demonstrated its superior ability for the fabrication of nanoscale devices,such as fin field effect transistor and bit pattern media,offering a variety of configurations for high-density integration and low-cost manufacturing.Over 1 T in-2 device density can be achieved either by direct templating or coupled with nanoimprinting to improve the throughput.The development of high x block copolymer further enhances the patterning resolution of DSA.In addition to its superiority in high-resolution patterning,the implementation ofDSA on a 300 mm pivot line fully demonstrates its potential for large-scale,high-throughput,and cost-effective manufacturing in industrial environment. 展开更多
关键词 directed self-assembly LITHOGRAPHY nanofabrication sub-10 nm block copolymer
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DFM:“Design for Manufacturing”or“Design Friendly Manufacturing” 认领
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作者 Wenzhan Zhoul Hung-Wen Chao +5 位作者 Yu Zhang Chan-Yuan Hu Wei Yuan Yifei Lu Hongmei Hu Xiang Peng 《微电子制造学报》 2020年第1期1-8,共8页
As the IC manufacturing enter sub 20nm tech nodes,DFM become more and more important to make sure more stable yield and lower cost.However,by introducing newly designed hardware(1980i etc.)process chemical(NTD)and Con... As the IC manufacturing enter sub 20nm tech nodes,DFM become more and more important to make sure more stable yield and lower cost.However,by introducing newly designed hardware(1980i etc.)process chemical(NTD)and Control Algorithm(Focus APC)into the mature tech nodes such as 14nm/12nm,more process window and less process variations are expected for latecomer wafer fabs(Tier-2/3 companies)who just started the competition with Tier-1 companies.With improved weapons,latecomer companies are able to review their DFM strategy one more time to see whether the benefit from hardware/process/control algorithm improvement can be shared with designers.In this paper,we use OPC simulation tools from different EDA suppliers to see the feasibility of transferring the benefits of hardware/process/control algorithm improvement to more relaxed design limitation through source mask optimization(SMO):1)Better hardware:scanner(better focus/exposure variation),CMP(intrafield topo),Mask CD variation(relaxed MEEF spec),etc.2) New process:from positive tone development to negative tone development.3)Better control schemes:holistic focus feedback,feedback/forward overlay control,high order CD uniformity improvement.Simulations show all those gains in hardware and process can be transferred into more relaxed design such as sub design rule structure process window include forbidden pitches(1D)and smaller E2E gaps(2D weak points). 展开更多
关键词 DESIGN for Manufacturing(DFM) DESIGN Friendly MANUFACTURING EUV LITHOGRAPHY Source Mask Optimization(SMO) DESIGN Technology Co-optimization(DTCO) PROCESS Window PROCESS Variation
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The recent development of soft x-ray interference lithography in SSRF 认领
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作者 Jun Zhao Shumin Yang +6 位作者 Chaofan Xue Liansheng Wang Zhaofeng Liang Lei Zhang Yong Wang Yanqing Wu Renzhong Tai 《极端制造(英文)》 2020年第1期101-107,共7页
This paper introduces the recent progress in methodologies and their related applications based on the soft x-ray interference lithography beamline in the Shanghai synchrotron radiation facility.Dual-beam,multibeam in... This paper introduces the recent progress in methodologies and their related applications based on the soft x-ray interference lithography beamline in the Shanghai synchrotron radiation facility.Dual-beam,multibeam interference lithography and Talbot lithography have been adopted as basic methods in the beamline.To improve the experimental performance,a precise real-time vibration evaluation system has been established;and the lithography stability has been greatly improved.In order to meet the demands for higher resolution and practical application,novel experimental methods have been developed,such as high-order diffraction interference exposure,high-aspect-ratio and large-area stitching exposure,and parallel direct writing achromatic Talbot lithography.As of now,a 25 nm half-pitch pattern has been obtained;and a cm2 exposure area has been achieved in practical samples.The above methods have been applied to extreme ultraviolet photoresist evaluation,photonic crystal and surface plasmonic effect research,and so on. 展开更多
关键词 soft x-ray EUV interference lithography
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